جهت استعلام قیمت با 66712131 تماس بگیرید
— 10 ns maximum propagation delay
— 5 ns setup time delay
— 7.5 ns clock to registered output delay
— f MAX = 80 MHz
— Reduced ground bounce
— 2000V ESD protection
— ICC max = 90 mA @ 25 MHz
— 100% tested at manufacture
— Reduces programming cost,
increases throughput
software as well as 3rd-party PLD development software
General Description
The EECMOS GAL16V8QS devices are fabricated using National’s CS8OBEV 0.8p. Electrically Erasable CMOS pro-cess. This advanced process makes National’s GAL16V8QS extremely fast, allowing controlled output edge rates which dramatically reduce noise. Low noise is actually specified and guaranteed with National’s GAL16V8QS Quiet SeriesTm devices. National’s fast programming algorithm allows the GAL16V8QS to be programmed significantly faster than similar devices using industry standard programmers. Fast programming reduces the cost of programming by greatly increasing programming throughput. National guarantees a minimum of 100 erase/write cycles. Unique test circuitry and reprogrammable cells allow com-plete AC, DC, cell, and functionality testing during manufac-ture. Therefore, National guarantees 100% field programm-ability and functionality of GAP> devices. In addition, a se-curity circuit is built-in, providing proprietary designs with copy protection.
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تهران -خ جمهوری - پاساژ امجد - طبقه زیر همکف - شماره 25
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