HY6116ALP-10

The HY6116A is a high-speed, low power and 2,048 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields maximum access time of 85ns. The HY6116A has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0 volt. Using CMOS technology, supply voltages from 2.0 to 5.5 volt have little effect on supply current in data retention mode. Reducing the supply voltage to minimize current drain is unnecessary with the HY6116A Series.