جهت استعلام قیمت با 66712131 تماس بگیرید
-package: DIP-28
-Brand : HYUNDAI
• Fast Access Time: 70,100,120 ns (max.)
• Low Power Dissipation Standby (CMOS): 10/.AiV (typ.) L
•Version 51,W (typ.) LL-Version Operating: 55mW/MHz (max.)
• Single 5V ± 10% Power Supply
• TTL compatible inputs and outputs
• Fully Static Operation —No clock or refresh required
• Three State Output
• Low Data Retention Voltage: 2V (min.)
• JEDEC Standard pin Configuration KM6264BIBL/BL
•L: 28-pin DIP (600 mil) KM6264BS/BLS/BLS
•L: 28-pin DIP (300 mil) KM6264BG/BLGIBLG
•1…: 28
•pin SOP (330 mil)
The KM6264B/BUBLL is a 65,536-bit high-speed Static Random Access Memory organized as 8,192 words by 8 bit. The device is fabricated using Samsung’s advanced CMOS process. The KM6264B/BUBL-L has an output enable input for precise control of the data outputs. It also has chip select inputs for the minimum current power down mode. The KM62641311311BL-L has been designed for high speed and low power applications. It is particularly well suited for battery back-up non-volatile memory applications.
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تهران -خ جمهوری - پاساژ امجد - طبقه زیر همکف - شماره 25
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